Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities

Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities

Japanese Journal of Applied Physics, Part 2: Letters

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Bibliographic Details
Main Authors: Lau, Wai Shing, Chor, Eng Fong, Foo, Chee Seng, Khoong, Wai Chee
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81221
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Institution: National University of Singapore
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Summary:Japanese Journal of Applied Physics, Part 2: Letters

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