Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities

Japanese Journal of Applied Physics, Part 2: Letters

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Main Authors:	Lau, Wai Shing, Chor, Eng Fong, Foo, Chee Seng, Khoong, Wai Chee
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81221
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-81221
record_format	dspace
spelling	sg-nus-scholar.10635-812212024-11-14T00:58:14Z Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities Lau, Wai Shing Chor, Eng Fong Foo, Chee Seng Khoong, Wai Chee ELECTRICAL ENGINEERING Japanese Journal of Applied Physics, Part 2: Letters 31 8 A L1021-L1023 JAPLD 2014-10-07T03:05:56Z 2014-10-07T03:05:56Z 1992-08-01 Article Lau, Wai Shing,Chor, Eng Fong,Foo, Chee Seng,Khoong, Wai Chee (1992-08-01). Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities. Japanese Journal of Applied Physics, Part 2: Letters 31 (8 A) : L1021-L1023. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/81221 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	Japanese Journal of Applied Physics, Part 2: Letters
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Lau, Wai Shing Chor, Eng Fong Foo, Chee Seng Khoong, Wai Chee
format	Article
author	Lau, Wai Shing Chor, Eng Fong Foo, Chee Seng Khoong, Wai Chee
spellingShingle	Lau, Wai Shing Chor, Eng Fong Foo, Chee Seng Khoong, Wai Chee Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities
author_sort	Lau, Wai Shing
title	Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities
title_short	Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities
title_full	Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities
title_fullStr	Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities
title_full_unstemmed	Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities
title_sort	strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81221
_version_	1821220988834021376

Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities

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