Latent damage investigation on lateral non-uniform charge generation and stress-induced leakage current in silicon dioxides subjected to low-level electrostatic discharge impulse stressing

Latent damage investigation on lateral non-uniform charge generation and stress-induced leakage current in silicon dioxides subjected to low-level electrostatic discharge impulse stressing

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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Bibliographic Details
Main Authors: Lim, P.S., Chim, W.K.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81520
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Institution: National University of Singapore
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Summary:Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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