Series resistance and effective channel mobility degradation in LDD NMOSFETs under hot-carrier stressing

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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Bibliographic Details
Main Authors: Oh, G.G., Chim, W.K., Chan, D.S.H., Lou, C.L.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81737
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Institution: National University of Singapore
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Summary:Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA