Series resistance and effective channel mobility degradation in LDD NMOSFETs under hot-carrier stressing
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
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sg-nus-scholar.10635-817372015-01-07T14:20:01Z Series resistance and effective channel mobility degradation in LDD NMOSFETs under hot-carrier stressing Oh, G.G. Chim, W.K. Chan, D.S.H. Lou, C.L. ELECTRICAL ENGINEERING Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 99-103 234 2014-10-07T03:11:29Z 2014-10-07T03:11:29Z 1999 Conference Paper Oh, G.G.,Chim, W.K.,Chan, D.S.H.,Lou, C.L. (1999). Series resistance and effective channel mobility degradation in LDD NMOSFETs under hot-carrier stressing. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 99-103. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/81737 NOT_IN_WOS Scopus |
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Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Oh, G.G. Chim, W.K. Chan, D.S.H. Lou, C.L. |
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Conference or Workshop Item |
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Oh, G.G. Chim, W.K. Chan, D.S.H. Lou, C.L. |
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Oh, G.G. Chim, W.K. Chan, D.S.H. Lou, C.L. Series resistance and effective channel mobility degradation in LDD NMOSFETs under hot-carrier stressing |
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Oh, G.G. |
title |
Series resistance and effective channel mobility degradation in LDD NMOSFETs under hot-carrier stressing |
title_short |
Series resistance and effective channel mobility degradation in LDD NMOSFETs under hot-carrier stressing |
title_full |
Series resistance and effective channel mobility degradation in LDD NMOSFETs under hot-carrier stressing |
title_fullStr |
Series resistance and effective channel mobility degradation in LDD NMOSFETs under hot-carrier stressing |
title_full_unstemmed |
Series resistance and effective channel mobility degradation in LDD NMOSFETs under hot-carrier stressing |
title_sort |
series resistance and effective channel mobility degradation in ldd nmosfets under hot-carrier stressing |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/81737 |
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