Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1-xGex
10.1088/0268-1242/17/2/309
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sg-nus-scholar.10635-822392023-10-30T22:33:24Z Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1-xGex Samanta, S.K. Bera, L.K. Benerjee, H.D. Maiti, C.K. ELECTRICAL & COMPUTER ENGINEERING 10.1088/0268-1242/17/2/309 Semiconductor Science and Technology 17 2 141-144 SSTEE 2014-10-07T04:27:01Z 2014-10-07T04:27:01Z 2002-02 Article Samanta, S.K., Bera, L.K., Benerjee, H.D., Maiti, C.K. (2002-02). Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1-xGex. Semiconductor Science and Technology 17 (2) : 141-144. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/17/2/309 02681242 http://scholarbank.nus.edu.sg/handle/10635/82239 000174582800011 Scopus |
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10.1088/0268-1242/17/2/309 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Samanta, S.K. Bera, L.K. Benerjee, H.D. Maiti, C.K. |
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Samanta, S.K. Bera, L.K. Benerjee, H.D. Maiti, C.K. |
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Samanta, S.K. Bera, L.K. Benerjee, H.D. Maiti, C.K. Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1-xGex |
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Samanta, S.K. |
title |
Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1-xGex |
title_short |
Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1-xGex |
title_full |
Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1-xGex |
title_fullStr |
Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1-xGex |
title_full_unstemmed |
Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1-xGex |
title_sort |
effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-si1-xgex |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/82239 |
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