Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1-xGex

10.1088/0268-1242/17/2/309

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Bibliographic Details
Main Authors: Samanta, S.K., Bera, L.K., Benerjee, H.D., Maiti, C.K.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82239
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Institution: National University of Singapore

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