Improved model for the stress-induced leakage current in thin silicon dioxide based on conduction-band electron and valence-band electron tunneling
10.1063/1.1429799
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sg-nus-scholar.10635-825072024-11-14T10:20:39Z Improved model for the stress-induced leakage current in thin silicon dioxide based on conduction-band electron and valence-band electron tunneling Chim, W.K. Lim, P.S. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1429799 Journal of Applied Physics 91 3 1577-1588 JAPIA 2014-10-07T04:30:12Z 2014-10-07T04:30:12Z 2002-02-01 Article Chim, W.K., Lim, P.S. (2002-02-01). Improved model for the stress-induced leakage current in thin silicon dioxide based on conduction-band electron and valence-band electron tunneling. Journal of Applied Physics 91 (3) : 1577-1588. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1429799 00218979 http://scholarbank.nus.edu.sg/handle/10635/82507 000173418500104 Scopus |
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Singapore Singapore |
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| description |
10.1063/1.1429799 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Chim, W.K. Lim, P.S. |
| format |
Article |
| author |
Chim, W.K. Lim, P.S. |
| spellingShingle |
Chim, W.K. Lim, P.S. Improved model for the stress-induced leakage current in thin silicon dioxide based on conduction-band electron and valence-band electron tunneling |
| author_sort |
Chim, W.K. |
| title |
Improved model for the stress-induced leakage current in thin silicon dioxide based on conduction-band electron and valence-band electron tunneling |
| title_short |
Improved model for the stress-induced leakage current in thin silicon dioxide based on conduction-band electron and valence-band electron tunneling |
| title_full |
Improved model for the stress-induced leakage current in thin silicon dioxide based on conduction-band electron and valence-band electron tunneling |
| title_fullStr |
Improved model for the stress-induced leakage current in thin silicon dioxide based on conduction-band electron and valence-band electron tunneling |
| title_full_unstemmed |
Improved model for the stress-induced leakage current in thin silicon dioxide based on conduction-band electron and valence-band electron tunneling |
| title_sort |
improved model for the stress-induced leakage current in thin silicon dioxide based on conduction-band electron and valence-band electron tunneling |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82507 |
| _version_ |
1821191646219337728 |