Influence of GaNAs strain compensation layers upon annealing of GaIn(N)As/GaAs quantum wells

Influence of GaNAs strain compensation layers upon annealing of GaIn(N)As/GaAs quantum wells

10.1016/j.tsf.2006.07.130

Saved in:
Bibliographic Details
Main Authors: Liu, H.F., Xiang, N.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Annealing
Dilute nitrides
Photoluminescence
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82531
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:10.1016/j.tsf.2006.07.130

Similar Items