Multi-level phase change memory devices with Ge 2Sb 2Te 5 layers separated by a thermal insulating Ta 2O 5 barrier layer

10.1063/1.3672448

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Main Authors:	Gyanathan, A., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82729
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82729
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spelling	sg-nus-scholar.10635-827292023-10-30T20:19:38Z Multi-level phase change memory devices with Ge 2Sb 2Te 5 layers separated by a thermal insulating Ta 2O 5 barrier layer Gyanathan, A. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.3672448 Journal of Applied Physics 110 12 - JAPIA 2014-10-07T04:32:49Z 2014-10-07T04:32:49Z 2011-12-15 Article Gyanathan, A., Yeo, Y.-C. (2011-12-15). Multi-level phase change memory devices with Ge 2Sb 2Te 5 layers separated by a thermal insulating Ta 2O 5 barrier layer. Journal of Applied Physics 110 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3672448 00218979 http://scholarbank.nus.edu.sg/handle/10635/82729 000298639800135 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.3672448
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Gyanathan, A. Yeo, Y.-C.
format	Article
author	Gyanathan, A. Yeo, Y.-C.
spellingShingle	Gyanathan, A. Yeo, Y.-C. Multi-level phase change memory devices with Ge 2Sb 2Te 5 layers separated by a thermal insulating Ta 2O 5 barrier layer
author_sort	Gyanathan, A.
title	Multi-level phase change memory devices with Ge 2Sb 2Te 5 layers separated by a thermal insulating Ta 2O 5 barrier layer
title_short	Multi-level phase change memory devices with Ge 2Sb 2Te 5 layers separated by a thermal insulating Ta 2O 5 barrier layer
title_full	Multi-level phase change memory devices with Ge 2Sb 2Te 5 layers separated by a thermal insulating Ta 2O 5 barrier layer
title_fullStr	Multi-level phase change memory devices with Ge 2Sb 2Te 5 layers separated by a thermal insulating Ta 2O 5 barrier layer
title_full_unstemmed	Multi-level phase change memory devices with Ge 2Sb 2Te 5 layers separated by a thermal insulating Ta 2O 5 barrier layer
title_sort	multi-level phase change memory devices with ge 2sb 2te 5 layers separated by a thermal insulating ta 2o 5 barrier layer
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82729
_version_	1781784209362255872

Multi-level phase change memory devices with Ge 2Sb 2Te 5 layers separated by a thermal insulating Ta 2O 5 barrier layer

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