Optimization scheme to minimize reference resistance distribution of spin-transfer-torque MRAM

Optimization scheme to minimize reference resistance distribution of spin-transfer-torque MRAM

10.1109/TVLSI.2013.2260365

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Bibliographic Details
Main Authors: Huang, K., Ning, N., Lian, Y.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Reference cell resistance distribution
sensing margin
spin-transfer-torque (STT).
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82846
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82846

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