Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching

Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching

10.1103/PhysRevB.84.165106

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Bibliographic Details
Main Authors: Liu, Z.Q., Leusink, D.P., Lü, W.M., Wang, X., Yang, X.P., Gopinadhan, K., Lin, Y.T., Annadi, A., Zhao, Y.L., Barman, A.R., Dhar, S., Feng, Y.P., Su, H.B., Xiong, G., Venkatesan, T., Ariando
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82981
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Institution: National University of Singapore
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Summary:10.1103/PhysRevB.84.165106

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