Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching

10.1103/PhysRevB.84.165106

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Main Authors:	Liu, Z.Q., Leusink, D.P., Lü, W.M., Wang, X., Yang, X.P., Gopinadhan, K., Lin, Y.T., Annadi, A., Zhao, Y.L., Barman, A.R., Dhar, S., Feng, Y.P., Su, H.B., Xiong, G., Venkatesan, T., Ariando
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82981
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-829812023-10-29T20:24:28Z Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching Liu, Z.Q. Leusink, D.P. Lü, W.M. Wang, X. Yang, X.P. Gopinadhan, K. Lin, Y.T. Annadi, A. Zhao, Y.L. Barman, A.R. Dhar, S. Feng, Y.P. Su, H.B. Xiong, G. Venkatesan, T. Ariando PHYSICS ELECTRICAL & COMPUTER ENGINEERING 10.1103/PhysRevB.84.165106 Physical Review B - Condensed Matter and Materials Physics 84 16 - PRBMD 2014-10-07T04:35:49Z 2014-10-07T04:35:49Z 2011-10-07 Article Liu, Z.Q., Leusink, D.P., Lü, W.M., Wang, X., Yang, X.P., Gopinadhan, K., Lin, Y.T., Annadi, A., Zhao, Y.L., Barman, A.R., Dhar, S., Feng, Y.P., Su, H.B., Xiong, G., Venkatesan, T., Ariando (2011-10-07). Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching. Physical Review B - Condensed Matter and Materials Physics 84 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.84.165106 10980121 http://scholarbank.nus.edu.sg/handle/10635/82981 000299002600006 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1103/PhysRevB.84.165106
author2	PHYSICS
author_facet	PHYSICS Liu, Z.Q. Leusink, D.P. Lü, W.M. Wang, X. Yang, X.P. Gopinadhan, K. Lin, Y.T. Annadi, A. Zhao, Y.L. Barman, A.R. Dhar, S. Feng, Y.P. Su, H.B. Xiong, G. Venkatesan, T. Ariando
format	Article
author	Liu, Z.Q. Leusink, D.P. Lü, W.M. Wang, X. Yang, X.P. Gopinadhan, K. Lin, Y.T. Annadi, A. Zhao, Y.L. Barman, A.R. Dhar, S. Feng, Y.P. Su, H.B. Xiong, G. Venkatesan, T. Ariando
spellingShingle	Liu, Z.Q. Leusink, D.P. Lü, W.M. Wang, X. Yang, X.P. Gopinadhan, K. Lin, Y.T. Annadi, A. Zhao, Y.L. Barman, A.R. Dhar, S. Feng, Y.P. Su, H.B. Xiong, G. Venkatesan, T. Ariando Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching
author_sort	Liu, Z.Q.
title	Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching
title_short	Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching
title_full	Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching
title_fullStr	Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching
title_full_unstemmed	Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching
title_sort	reversible metal-insulator transition in laalo3 thin films mediated by intragap defects: an alternative mechanism for resistive switching
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82981
_version_	1781784266798006272

Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching

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