Shape effects on the performance of Si and Ge nanowire field-effect transistors based on size dependent bandstructure

Shape effects on the performance of Si and Ge nanowire field-effect transistors based on size dependent bandstructure

10.1143/JJAP.49.04DN07

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Bibliographic Details
Main Authors: Koong, C.S., Samudra, G., Liang, G.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83011
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Institution: National University of Singapore
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Summary:10.1143/JJAP.49.04DN07

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