Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed

10.1021/nl073407b

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Main Authors: Hu, Y., Xiang, J., Liang, G., Yan, H., Lieber, C.M.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83107
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-831072023-10-27T07:17:34Z Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed Hu, Y. Xiang, J. Liang, G. Yan, H. Lieber, C.M. ELECTRICAL & COMPUTER ENGINEERING 10.1021/nl073407b Nano Letters 8 3 925-930 2014-10-07T04:37:21Z 2014-10-07T04:37:21Z 2008-03 Article Hu, Y., Xiang, J., Liang, G., Yan, H., Lieber, C.M. (2008-03). Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed. Nano Letters 8 (3) : 925-930. ScholarBank@NUS Repository. https://doi.org/10.1021/nl073407b 15306984 http://scholarbank.nus.edu.sg/handle/10635/83107 000253947400029 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1021/nl073407b
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Hu, Y.
Xiang, J.
Liang, G.
Yan, H.
Lieber, C.M.
format Article
author Hu, Y.
Xiang, J.
Liang, G.
Yan, H.
Lieber, C.M.
spellingShingle Hu, Y.
Xiang, J.
Liang, G.
Yan, H.
Lieber, C.M.
Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed
author_sort Hu, Y.
title Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed
title_short Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed
title_full Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed
title_fullStr Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed
title_full_unstemmed Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed
title_sort sub-100 nanometer channel length ge/si nanowire transistors with potential for 2 thz switching speed
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83107
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