Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed
10.1021/nl073407b
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sg-nus-scholar.10635-831072023-10-27T07:17:34Z Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed Hu, Y. Xiang, J. Liang, G. Yan, H. Lieber, C.M. ELECTRICAL & COMPUTER ENGINEERING 10.1021/nl073407b Nano Letters 8 3 925-930 2014-10-07T04:37:21Z 2014-10-07T04:37:21Z 2008-03 Article Hu, Y., Xiang, J., Liang, G., Yan, H., Lieber, C.M. (2008-03). Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed. Nano Letters 8 (3) : 925-930. ScholarBank@NUS Repository. https://doi.org/10.1021/nl073407b 15306984 http://scholarbank.nus.edu.sg/handle/10635/83107 000253947400029 Scopus |
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10.1021/nl073407b |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Hu, Y. Xiang, J. Liang, G. Yan, H. Lieber, C.M. |
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Hu, Y. Xiang, J. Liang, G. Yan, H. Lieber, C.M. |
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Hu, Y. Xiang, J. Liang, G. Yan, H. Lieber, C.M. Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed |
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Hu, Y. |
title |
Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed |
title_short |
Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed |
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Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed |
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Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed |
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Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed |
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sub-100 nanometer channel length ge/si nanowire transistors with potential for 2 thz switching speed |
publishDate |
2014 |
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http://scholarbank.nus.edu.sg/handle/10635/83107 |
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