Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed

Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed

10.1021/nl073407b

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Bibliographic Details
Main Authors:	Hu, Y., Xiang, J., Liang, G., Yan, H., Lieber, C.M.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83107
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Institution:	National University of Singapore

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