Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate

10.1149/05009.0949ecst

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Main Authors:	Gong, X., Su, S., Liu, B., Wang, L., Wang, W., Yang, Y., Cheng, R., Kong, E., Cheng, B., Han, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83723
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83723
record_format	dspace
spelling	sg-nus-scholar.10635-837232023-10-29T21:04:19Z Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate Gong, X. Su, S. Liu, B. Wang, L. Wang, W. Yang, Y. Cheng, R. Kong, E. Cheng, B. Han, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/05009.0949ecst ECS Transactions 50 9 949-956 2014-10-07T04:44:26Z 2014-10-07T04:44:26Z 2012 Conference Paper Gong, X., Su, S., Liu, B., Wang, L., Wang, W., Yang, Y., Cheng, R., Kong, E., Cheng, B., Han, G., Yeo, Y.-C. (2012). Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate. ECS Transactions 50 (9) : 949-956. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.0949ecst 9781607683575 19385862 http://scholarbank.nus.edu.sg/handle/10635/83723 000338015300113 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1149/05009.0949ecst
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Gong, X. Su, S. Liu, B. Wang, L. Wang, W. Yang, Y. Cheng, R. Kong, E. Cheng, B. Han, G. Yeo, Y.-C.
format	Conference or Workshop Item
author	Gong, X. Su, S. Liu, B. Wang, L. Wang, W. Yang, Y. Cheng, R. Kong, E. Cheng, B. Han, G. Yeo, Y.-C.
spellingShingle	Gong, X. Su, S. Liu, B. Wang, L. Wang, W. Yang, Y. Cheng, R. Kong, E. Cheng, B. Han, G. Yeo, Y.-C. Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate
author_sort	Gong, X.
title	Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate
title_short	Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate
title_full	Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate
title_fullStr	Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate
title_full_unstemmed	Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate
title_sort	fabrication and negative bias temperature instability (nbti) study on ge0.97sn0.03 p-mosfets with si2h6 passivation and hfo2 high-k and tan metal gate
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83723
_version_	1781784384879198208

Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate

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