Realizing steep subthreshold swing with impact ionization transistors
10.1109/VTSA.2009.5159284
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sg-nus-scholar.10635-841282023-10-25T22:27:04Z Realizing steep subthreshold swing with impact ionization transistors Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VTSA.2009.5159284 International Symposium on VLSI Technology, Systems, and Applications, Proceedings 43-44 2014-10-07T04:49:08Z 2014-10-07T04:49:08Z 2009 Conference Paper Yeo, Y.-C. (2009). Realizing steep subthreshold swing with impact ionization transistors. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 43-44. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2009.5159284 9781424427857 http://scholarbank.nus.edu.sg/handle/10635/84128 000272451000019 Scopus |
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10.1109/VTSA.2009.5159284 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Yeo, Y.-C. |
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Conference or Workshop Item |
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Yeo, Y.-C. |
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Yeo, Y.-C. Realizing steep subthreshold swing with impact ionization transistors |
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Yeo, Y.-C. |
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Realizing steep subthreshold swing with impact ionization transistors |
title_short |
Realizing steep subthreshold swing with impact ionization transistors |
title_full |
Realizing steep subthreshold swing with impact ionization transistors |
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Realizing steep subthreshold swing with impact ionization transistors |
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Realizing steep subthreshold swing with impact ionization transistors |
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realizing steep subthreshold swing with impact ionization transistors |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/84128 |
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