SONOS type memory cell with ALD LaAlO blocking oxide for high speed operation

SONOS type memory cell with ALD LaAlO blocking oxide for high speed operation

10.1109/ICSICT.2008.4734672

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Bibliographic Details
Main Authors: He, W., Chan, D.S.H., Cho, B.-J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84205
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Institution: National University of Singapore
Description
Summary:10.1109/ICSICT.2008.4734672

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