SONOS type memory cell with ALD LaAlO blocking oxide for high speed operation

• Main Authors: He, W., Chan, D.S.H., Cho, B.-J.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84205
• Institution: National University of Singapore

10.1109/ICSICT.2008.4734672