Potentiostatic formation of porous silicon in dilute HF: Evidence that nanocrystal size is not restricted by quantum confinement
10.1016/j.electacta.2008.01.057
Saved in:
Main Authors: | Wijesinghe, T.L.S.L., Teo, E.J., Blackwood, D.J. |
---|---|
Other Authors: | MATERIALS SCIENCE AND ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/86660 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
The effect of etching temperature on the photoluminescence emitted from, and the morphology of, p-type porous silicon
by: Blackwood, D.J., et al.
Published: (2014) -
Tunable colour emission from patterned porous silicon using ion beam writing
by: Teo, E.J., et al.
Published: (2014) -
Electrochemical generation and processing of porous silicon
by: LIU MINGHUI
Published: (2010) -
Fabrication of patterned porous silicon using high-energy ion irradiation
by: Teo, E.J., et al.
Published: (2014) -
Patterning light emitting porous silicon using helium beam irradiation
by: Teo, E.J., et al.
Published: (2014)