Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric

10.1063/1.2790075

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Main Authors: Yang, M., Wang, S.J., Peng, G.W., Wu, R.Q., Feng, Y.P.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/95712
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-957122024-11-13T09:07:25Z Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric Yang, M. Wang, S.J. Peng, G.W. Wu, R.Q. Feng, Y.P. PHYSICS 10.1063/1.2790075 Applied Physics Letters 91 13 - APPLA 2014-10-16T09:14:56Z 2014-10-16T09:14:56Z 2007 Article Yang, M., Wang, S.J., Peng, G.W., Wu, R.Q., Feng, Y.P. (2007). Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric. Applied Physics Letters 91 (13) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2790075 00036951 http://scholarbank.nus.edu.sg/handle/10635/95712 000249787000070 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1063/1.2790075
author2 PHYSICS
author_facet PHYSICS
Yang, M.
Wang, S.J.
Peng, G.W.
Wu, R.Q.
Feng, Y.P.
format Article
author Yang, M.
Wang, S.J.
Peng, G.W.
Wu, R.Q.
Feng, Y.P.
spellingShingle Yang, M.
Wang, S.J.
Peng, G.W.
Wu, R.Q.
Feng, Y.P.
Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric
author_sort Yang, M.
title Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric
title_short Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric
title_full Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric
title_fullStr Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric
title_full_unstemmed Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric
title_sort ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/95712
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