Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric
10.1063/1.2790075
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sg-nus-scholar.10635-957122024-11-13T09:07:25Z Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric Yang, M. Wang, S.J. Peng, G.W. Wu, R.Q. Feng, Y.P. PHYSICS 10.1063/1.2790075 Applied Physics Letters 91 13 - APPLA 2014-10-16T09:14:56Z 2014-10-16T09:14:56Z 2007 Article Yang, M., Wang, S.J., Peng, G.W., Wu, R.Q., Feng, Y.P. (2007). Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric. Applied Physics Letters 91 (13) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2790075 00036951 http://scholarbank.nus.edu.sg/handle/10635/95712 000249787000070 Scopus |
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10.1063/1.2790075 |
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PHYSICS Yang, M. Wang, S.J. Peng, G.W. Wu, R.Q. Feng, Y.P. |
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Yang, M. Wang, S.J. Peng, G.W. Wu, R.Q. Feng, Y.P. |
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Yang, M. Wang, S.J. Peng, G.W. Wu, R.Q. Feng, Y.P. Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric |
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Yang, M. |
title |
Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric |
title_short |
Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric |
title_full |
Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric |
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Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric |
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Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric |
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ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectric |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/95712 |
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1821187049324019712 |