Development of chemical beam epitaxy for the deposition of gallium nitride

Development of chemical beam epitaxy for the deposition of gallium nitride

Materials Science and Engineering B

Saved in:
Bibliographic Details
Main Authors: Kingsley, C.R., Whitaker, T.J., Wee, A.T.S., Jackman, R.B., Foord, J.S.
Other Authors: PHYSICS
Format: Article
Published: 2014
Subjects:
Gallium nitride
Nitrides
Schottky barrier
Thin films
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96208
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:Materials Science and Engineering B

Similar Items