Exciton linewidth due to scattering by free carriers in semiconducting quantum well structures: Finite confining potential model

Exciton linewidth due to scattering by free carriers in semiconducting quantum well structures: Finite confining potential model

Journal of Applied Physics

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書目詳細資料
Main Authors:	Koh, T.S., Feng, Y.P., Spector, H.N.
其他作者:	PHYSICS
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/96547
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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