Exciton linewidth due to scattering by free carriers in semiconducting quantum well structures: Finite confining potential model
Journal of Applied Physics
محفوظ في:
المؤلفون الرئيسيون: | Koh, T.S., Feng, Y.P., Spector, H.N. |
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مؤلفون آخرون: | PHYSICS |
التنسيق: | مقال |
منشور في: |
2014
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الوصول للمادة أونلاين: | http://scholarbank.nus.edu.sg/handle/10635/96547 |
الوسوم: |
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مواد مشابهة
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Effects of electric field on the exciton linewidth broadening due to scattering by free carriers in semiconducting quantum-well structures
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Scattering of excitons by free carriers in semiconducting quantum well structures: Finite potential well model
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Effect of an electric field on the exciton linewidth due to scattering of excitons by ionized impurities in semiconducting quantum well structures
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منشور في: (2014) -
Effect of screening on the electric field dependence of the exciton linewidth due to scattering by ionized impurities in semiconducting quantum well structures
بواسطة: Feng, Y.P., وآخرون
منشور في: (2014)