Gate-controlled nonvolatile graphene-ferroelectric memory

10.1063/1.3119215

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Bibliographic Details
Main Authors:	Zheng, Y., Ni, G.-X., Toh, C.-T., Zeng, M.-G., Chen, S.-T., Yao, K., Özyilmaz, B.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/96690
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Institution:	National University of Singapore

Description
Summary:	10.1063/1.3119215

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