Ge islanding growth on nitridized Si and the effect of Sb surfactant

10.1088/0953-8984/14/39/303

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Main Authors: Hu, Y., Wang, X.-S., Cue, N., Wang, X.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96694
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-966942023-10-29T23:33:14Z Ge islanding growth on nitridized Si and the effect of Sb surfactant Hu, Y. Wang, X.-S. Cue, N. Wang, X. PHYSICS 10.1088/0953-8984/14/39/303 Journal of Physics Condensed Matter 14 39 8939-8946 JCOME 2014-10-16T09:26:27Z 2014-10-16T09:26:27Z 2002-10-07 Article Hu, Y., Wang, X.-S., Cue, N., Wang, X. (2002-10-07). Ge islanding growth on nitridized Si and the effect of Sb surfactant. Journal of Physics Condensed Matter 14 (39) : 8939-8946. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/14/39/303 09538984 http://scholarbank.nus.edu.sg/handle/10635/96694 000178910500009 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1088/0953-8984/14/39/303
author2 PHYSICS
author_facet PHYSICS
Hu, Y.
Wang, X.-S.
Cue, N.
Wang, X.
format Article
author Hu, Y.
Wang, X.-S.
Cue, N.
Wang, X.
spellingShingle Hu, Y.
Wang, X.-S.
Cue, N.
Wang, X.
Ge islanding growth on nitridized Si and the effect of Sb surfactant
author_sort Hu, Y.
title Ge islanding growth on nitridized Si and the effect of Sb surfactant
title_short Ge islanding growth on nitridized Si and the effect of Sb surfactant
title_full Ge islanding growth on nitridized Si and the effect of Sb surfactant
title_fullStr Ge islanding growth on nitridized Si and the effect of Sb surfactant
title_full_unstemmed Ge islanding growth on nitridized Si and the effect of Sb surfactant
title_sort ge islanding growth on nitridized si and the effect of sb surfactant
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/96694
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