Ge islanding growth on nitridized Si and the effect of Sb surfactant
10.1088/0953-8984/14/39/303
Saved in:
Main Authors: | Hu, Y., Wang, X.-S., Cue, N., Wang, X. |
---|---|
其他作者: | PHYSICS |
格式: | Article |
出版: |
2014
|
在線閱讀: | http://scholarbank.nus.edu.sg/handle/10635/96694 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
相似書籍
-
Different growth behavior of Ge, Al and Sb on graphite
由: Xiao, W., et al.
出版: (2014) -
Strain-mediated uniform islands in stacked Ge/Si(001) layers
由: Xu, M., et al.
出版: (2014) -
Pressure-induced resonant Raman scattering in Ge/Si islands
由: Teo, K.L., et al.
出版: (2014) -
Raman scattering studies of Ge/Si islands under hydrostatic pressure
由: Teo, K.L., et al.
出版: (2014) -
Acomparative study of al, Ge and Sb selfassembled nanostructures on graphite
由: Wang, X.-S., et al.
出版: (2014)