Dependence of energy band offsets at Ge2Sb2Te 5 / SiO2 interface on nitrogen concentration

Dependence of energy band offsets at Ge2Sb2Te 5 / SiO2 interface on nitrogen concentration

10.1063/1.3079396

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Bibliographic Details
Main Authors: Fang, L.W.-W., Zheng, Z., Pan, J.-S., Zhao, R., Li, M., Shi, L., Chong, T.-C., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82119
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82119

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