Study of interfaces between phase-change material Ge 2Sb 2Te 5 and prevalent complementary metal-oxide semiconductor materials by XPS

بواسطة Pan, J., Fang, L.W.-W., Zhang, Z., Yeo, Y.-C.
منشور في 2014

Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materials

بواسطة Fang, L.W.-W., Pan, J.-S., Zhao, R., Shi, L., Chong, T.-C., Samudra, G., Yeo, Y.-C.
منشور في 2014

Fermi-level pinning at the interface between metals and nitrogen-doped Ge2 Sb2 Te5 examined by x-ray photoelectron spectroscopy

بواسطة Fang, L.W.-W., Zhao, R., Pan, J., Zhang, Z., Shi, L., Chong, T.-C., Yeo, Y.-C.
منشور في 2014

Band offsets between SiO2 and phase change materials in the (GeTe) x (Sb2 Te3) 1-x pseudobinary system

بواسطة Fang, L.W.-W., Zhao, R., Zhang, Z., Pan, J., Shi, L., Chong, T.-C., Yeo, Y.-C.
منشور في 2014

Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5

بواسطة Fang, L.W.-W., Zhao, R., Li, M., Lim, K.-G., Shi, L., Chong, T.-C., Yeo, Y.-C.
منشور في 2014

Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reduction

بواسطة Fang, L.W.-W., Zhao, R., Lim, K.-G., Yang, H., Shi, L., Chong, T.-C., Yeo, Y.-C.
منشور في 2014

Dependence of energy band offsets at Ge2Sb2Te 5 / SiO2 interface on nitrogen concentration

بواسطة Fang, L.W.-W., Zheng, Z., Pan, J.-S., Zhao, R., Li, M., Shi, L., Chong, T.-C., Yeo, Y.-C.
منشور في 2014

Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devices

بواسطة Fang, L.W.-W., Zhang, Z., Zhao, R., Pan, J., Li, M., Shi, L., Chong, T.-C., Yeo, Y.-C.
منشور في 2014

Temperature-dependent phase separation during annealing of Ge 2Sb 2Te 5 thin films in vacuum

بواسطة Zhang, Z., Pan, J., Fang, L.W.-W., Yeo, Y.-C., Foo, Y.L., Zhao, R., Shi, L., Tok, E.S.
منشور في 2014

Effective method for preparation of oxide-free Ge2Sb 2Te5 surface: An X-ray photoelectron spectroscopy study

بواسطة Zhang, Z., Pan, J., Foo, Y.L., Fang, L.W.-W., Yeo, Y.-C., Zhao, R., Shi, L., Chong, T.-C.
منشور في 2014

Silicides as new electrode/heater for compact integration of phase change memory with CMOS

بواسطة Fang, L.W.-W., Zhao, R., Yeo, E.-G., Lim, K.-G., Yang, H., Shi, L., Chong, T.-C., Yeo, Y.-C.
منشور في 2014

Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology

بواسطة Fang, L.W.-W., Zhao, R., Yeo, E.-G., Lim, K.-G., Yang, H., Shi, L., Chong, T.-C., Yeo, Y.-C.
منشور في 2014

Photoemission study of energy band alignment of Ge2Sb 2Te5 and common CMOS materials

بواسطة Fang, L.W.-W., Pan, J.-S., Lim, A.E.-J., Lee, R.T.-P., Li, M., Zhao, R., Shi, L., Chong, T.-C., Yeo, Y.-C.
منشور في 2014