Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devices
10.1063/1.3475721
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| 其他作者: | |
| 格式: | Article |
| 出版: |
2014
|
| 在線閱讀: | http://scholarbank.nus.edu.sg/handle/10635/82353 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|