Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5

Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5

10.1063/1.3383042

Saved in:
Bibliographic Details
Main Authors: Fang, L.W.-W., Zhao, R., Li, M., Lim, K.-G., Shi, L., Chong, T.-C., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82122
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82122

Similar Items