Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5

10.1063/1.3383042

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Main Authors:	Fang, L.W.-W., Zhao, R., Li, M., Lim, K.-G., Shi, L., Chong, T.-C., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82122
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-821222023-10-25T22:18:35Z Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5 Fang, L.W.-W. Zhao, R. Li, M. Lim, K.-G. Shi, L. Chong, T.-C. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.3383042 Journal of Applied Physics 107 10 - JAPIA 2014-10-07T04:25:39Z 2014-10-07T04:25:39Z 2010-05-15 Article Fang, L.W.-W., Zhao, R., Li, M., Lim, K.-G., Shi, L., Chong, T.-C., Yeo, Y.-C. (2010-05-15). Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5. Journal of Applied Physics 107 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3383042 00218979 http://scholarbank.nus.edu.sg/handle/10635/82122 000278182400172 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.3383042
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Fang, L.W.-W. Zhao, R. Li, M. Lim, K.-G. Shi, L. Chong, T.-C. Yeo, Y.-C.
format	Article
author	Fang, L.W.-W. Zhao, R. Li, M. Lim, K.-G. Shi, L. Chong, T.-C. Yeo, Y.-C.
spellingShingle	Fang, L.W.-W. Zhao, R. Li, M. Lim, K.-G. Shi, L. Chong, T.-C. Yeo, Y.-C. Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5
author_sort	Fang, L.W.-W.
title	Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5
title_short	Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5
title_full	Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5
title_fullStr	Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5
title_full_unstemmed	Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5
title_sort	dependence of the properties of phase change random access memory on nitrogen doping concentration in ge2sb2 te5
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82122
_version_	1781784064389283840

Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5

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