Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5

Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5

10.1063/1.3383042

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Bibliographic Details
Main Authors: Fang, L.W.-W., Zhao, R., Li, M., Lim, K.-G., Shi, L., Chong, T.-C., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82122
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Institution: National University of Singapore
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Summary:10.1063/1.3383042

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