Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2 Te5
10.1063/1.3383042
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Main Authors: | Fang, L.W.-W., Zhao, R., Li, M., Lim, K.-G., Shi, L., Chong, T.-C., Yeo, Y.-C. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82122 |
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Institution: | National University of Singapore |
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