Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devices

Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devices

10.1063/1.3475721

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書目詳細資料
Main Authors:	Fang, L.W.-W., Zhang, Z., Zhao, R., Pan, J., Li, M., Shi, L., Chong, T.-C., Yeo, Y.-C.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/82353
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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