Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning free

Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning free

Technical Digest - International Electron Devices Meeting, IEDM

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Bibliographic Details
Main Authors: Park, C.S., Cho, B.J., Tang, L.J., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/71898
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/71898

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