Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning free

Technical Digest - International Electron Devices Meeting, IEDM

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Main Authors:	Park, C.S., Cho, B.J., Tang, L.J., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/71898
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-71898
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spelling	sg-nus-scholar.10635-718982015-01-08T19:09:40Z Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning free Park, C.S. Cho, B.J. Tang, L.J. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Technical Digest - International Electron Devices Meeting, IEDM 299-302 TDIMD 2014-06-19T03:29:05Z 2014-06-19T03:29:05Z 2004 Conference Paper Park, C.S.,Cho, B.J.,Tang, L.J.,Kwong, D.-L. (2004). Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning free. Technical Digest - International Electron Devices Meeting, IEDM : 299-302. ScholarBank@NUS Repository. 01631918 http://scholarbank.nus.edu.sg/handle/10635/71898 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Technical Digest - International Electron Devices Meeting, IEDM
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Park, C.S. Cho, B.J. Tang, L.J. Kwong, D.-L.
format	Conference or Workshop Item
author	Park, C.S. Cho, B.J. Tang, L.J. Kwong, D.-L.
spellingShingle	Park, C.S. Cho, B.J. Tang, L.J. Kwong, D.-L. Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning free
author_sort	Park, C.S.
title	Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning free
title_short	Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning free
title_full	Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning free
title_fullStr	Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning free
title_full_unstemmed	Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning free
title_sort	substituted aluminum metal gate on high-k dielectric for low work-function and fermi-level pinning free
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/71898
_version_	1681087467521835008

Substituted aluminum metal gate on high-K dielectric for low work-function and fermi-level pinning free

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