Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectric

Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectric

10.1109/.2005.1469207

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Bibliographic Details
Main Authors: Park, C.S., Cho, B.J., Hwang, W.S., Loh, W.Y., Tang, L.J., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83651
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83651

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