Narrow surface transient and high depth resolution SIMS using 250 eV O2 +

Narrow surface transient and high depth resolution SIMS using 250 eV O2 +

10.1016/j.apsusc.2006.02.198

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Bibliographic Details
Main Authors: Chanbasha, A.R., Wee, A.T.S.
Other Authors: PHYSICS
Format: Article
Published: 2014
Subjects:
Depth resolution
Roughening
Secondary ion mass spectroscopy
Ultralow-energy
Online Access:http://scholarbank.nus.edu.sg/handle/10635/97299
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Institution: National University of Singapore
Description
Summary:10.1016/j.apsusc.2006.02.198

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