Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site

Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site

10.1103/PhysRevB.81.125211

Saved in:
Bibliographic Details
Main Authors: Yang, K., Wu, R., Shen, L., Feng, Y.P., Dai, Y., Huang, B.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/97475
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:10.1103/PhysRevB.81.125211

Similar Items