Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site

10.1103/PhysRevB.81.125211

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Main Authors: Yang, K., Wu, R., Shen, L., Feng, Y.P., Dai, Y., Huang, B.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/97475
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spelling sg-nus-scholar.10635-974752023-10-26T08:04:51Z Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site Yang, K. Wu, R. Shen, L. Feng, Y.P. Dai, Y. Huang, B. PHYSICS 10.1103/PhysRevB.81.125211 Physical Review B - Condensed Matter and Materials Physics 81 12 - PRBMD 2014-10-16T09:35:43Z 2014-10-16T09:35:43Z 2010-03-30 Article Yang, K., Wu, R., Shen, L., Feng, Y.P., Dai, Y., Huang, B. (2010-03-30). Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site. Physical Review B - Condensed Matter and Materials Physics 81 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.81.125211 10980121 http://scholarbank.nus.edu.sg/handle/10635/97475 000276248900084 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1103/PhysRevB.81.125211
author2 PHYSICS
author_facet PHYSICS
Yang, K.
Wu, R.
Shen, L.
Feng, Y.P.
Dai, Y.
Huang, B.
format Article
author Yang, K.
Wu, R.
Shen, L.
Feng, Y.P.
Dai, Y.
Huang, B.
spellingShingle Yang, K.
Wu, R.
Shen, L.
Feng, Y.P.
Dai, Y.
Huang, B.
Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site
author_sort Yang, K.
title Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site
title_short Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site
title_full Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site
title_fullStr Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site
title_full_unstemmed Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site
title_sort origin of d0 magnetism in ii-vi and iii-v semiconductors by substitutional doping at anion site
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/97475
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