Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site
10.1103/PhysRevB.81.125211
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sg-nus-scholar.10635-974752023-10-26T08:04:51Z Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site Yang, K. Wu, R. Shen, L. Feng, Y.P. Dai, Y. Huang, B. PHYSICS 10.1103/PhysRevB.81.125211 Physical Review B - Condensed Matter and Materials Physics 81 12 - PRBMD 2014-10-16T09:35:43Z 2014-10-16T09:35:43Z 2010-03-30 Article Yang, K., Wu, R., Shen, L., Feng, Y.P., Dai, Y., Huang, B. (2010-03-30). Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site. Physical Review B - Condensed Matter and Materials Physics 81 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.81.125211 10980121 http://scholarbank.nus.edu.sg/handle/10635/97475 000276248900084 Scopus |
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10.1103/PhysRevB.81.125211 |
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PHYSICS Yang, K. Wu, R. Shen, L. Feng, Y.P. Dai, Y. Huang, B. |
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Article |
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Yang, K. Wu, R. Shen, L. Feng, Y.P. Dai, Y. Huang, B. |
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Yang, K. Wu, R. Shen, L. Feng, Y.P. Dai, Y. Huang, B. Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site |
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Yang, K. |
title |
Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site |
title_short |
Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site |
title_full |
Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site |
title_fullStr |
Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site |
title_full_unstemmed |
Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site |
title_sort |
origin of d0 magnetism in ii-vi and iii-v semiconductors by substitutional doping at anion site |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/97475 |
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