Relaxation and bond breaking at defect sites on GaP (110) surfaces by phonon-assisted multihole localization
10.1103/PhysRevB.47.2031
Saved in:
Main Authors: | Khoo, G.S., Ong, C.K., Itoh, N. |
---|---|
Other Authors: | PHYSICS |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/97795 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
CNDO calculation of energies of Ga atom ejection from defect sites on the GaP(110) surface
by: Ong, C.K., et al.
Published: (2014) -
Theoretical studies of defect-initiated particle emission from GaP(110) surfaces: Basis for a new technique of generating perfect surfaces
by: Itoh, N., et al.
Published: (2014) -
Surface states of GaP (110)
by: Ong, C.K., et al.
Published: (2014) -
Defect processes in GaP: Implications for the behavior of excited surface defects
by: Khoo, G.S., et al.
Published: (2014) -
Modeled microscopic structures of monatomic and diatomic Al on stepped and unstepped GaP(110) surfaces
by: Khoo, G.S., et al.
Published: (2014)