Symmetrical negative differential resistance behavior of a resistive switching device

10.1021/nn204907t

Saved in:

Bibliographic Details
Main Authors:	Du, Y., Pan, H., Wang, S., Wu, T., Feng, Y.P., Pan, J., Wee, A.T.S.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Subjects:	band gap state charge storage negative differential resistance oxygen molecular ions resistive switching titanium dioxide
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/98160
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Description
Summary:	10.1021/nn204907t

Similar Items