Vertically Coupled GaInAsP/InP Microring Lasers Fabricated by using Full Wafer Bonding

We summarize results on the processing and characterization of current injected 1.55 micrometer single- and multi-microring lasers including vertical active/passive waveguide coupling. The devices were fabricated by GaInAsP/InP-GaAs full-wafer bonding using a BCB interface.

Saved in:

Bibliographic Details
Main Authors:	Heidrich, H., Hamacher, M., Troppenz, U., Syvridis, D., Alexandrapoulos, D., Mikroulis, S., TEE, Chyng Wen
Format:	text
Language:	English
Published:	Institutional Knowledge at Singapore Management University 2007
Subjects:	Physical Sciences and Mathematics
Online Access:	https://ink.library.smu.edu.sg/lkcsb_research/3359 https://ieeexplore.ieee.org/document/5758449
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Singapore Management University
Language:	English

id	sg-smu-ink.lkcsb_research-4358
record_format	dspace
spelling	sg-smu-ink.lkcsb_research-43582019-01-09T08:57:19Z Vertically Coupled GaInAsP/InP Microring Lasers Fabricated by using Full Wafer Bonding Heidrich, H. Hamacher, M. Troppenz, U. Syvridis, D. Alexandrapoulos, D. Mikroulis, S. TEE, Chyng Wen We summarize results on the processing and characterization of current injected 1.55 micrometer single- and multi-microring lasers including vertical active/passive waveguide coupling. The devices were fabricated by GaInAsP/InP-GaAs full-wafer bonding using a BCB interface. 2007-09-01T07:00:00Z text https://ink.library.smu.edu.sg/lkcsb_research/3359 info:doi/10.1049/ic:20070227 https://ieeexplore.ieee.org/document/5758449 Research Collection Lee Kong Chian School Of Business eng Institutional Knowledge at Singapore Management University Physical Sciences and Mathematics
institution	Singapore Management University
building	SMU Libraries
continent	Asia
country	Singapore Singapore
content_provider	SMU Libraries
collection	InK@SMU
language	English
topic	Physical Sciences and Mathematics
spellingShingle	Physical Sciences and Mathematics Heidrich, H. Hamacher, M. Troppenz, U. Syvridis, D. Alexandrapoulos, D. Mikroulis, S. TEE, Chyng Wen Vertically Coupled GaInAsP/InP Microring Lasers Fabricated by using Full Wafer Bonding
description	We summarize results on the processing and characterization of current injected 1.55 micrometer single- and multi-microring lasers including vertical active/passive waveguide coupling. The devices were fabricated by GaInAsP/InP-GaAs full-wafer bonding using a BCB interface.
format	text
author	Heidrich, H. Hamacher, M. Troppenz, U. Syvridis, D. Alexandrapoulos, D. Mikroulis, S. TEE, Chyng Wen
author_facet	Heidrich, H. Hamacher, M. Troppenz, U. Syvridis, D. Alexandrapoulos, D. Mikroulis, S. TEE, Chyng Wen
author_sort	Heidrich, H.
title	Vertically Coupled GaInAsP/InP Microring Lasers Fabricated by using Full Wafer Bonding
title_short	Vertically Coupled GaInAsP/InP Microring Lasers Fabricated by using Full Wafer Bonding
title_full	Vertically Coupled GaInAsP/InP Microring Lasers Fabricated by using Full Wafer Bonding
title_fullStr	Vertically Coupled GaInAsP/InP Microring Lasers Fabricated by using Full Wafer Bonding
title_full_unstemmed	Vertically Coupled GaInAsP/InP Microring Lasers Fabricated by using Full Wafer Bonding
title_sort	vertically coupled gainasp/inp microring lasers fabricated by using full wafer bonding
publisher	Institutional Knowledge at Singapore Management University
publishDate	2007
url	https://ink.library.smu.edu.sg/lkcsb_research/3359 https://ieeexplore.ieee.org/document/5758449
_version_	1770571406876082176

Vertically Coupled GaInAsP/InP Microring Lasers Fabricated by using Full Wafer Bonding

Similar Items