Vertically Coupled GaInAsP/InP Microring Lasers Fabricated by using Full Wafer Bonding

• Main Authors: Heidrich, H., Hamacher, M., Troppenz, U., Syvridis, D., Alexandrapoulos, D., Mikroulis, S., TEE, Chyng Wen
• Format: text
• Language: English
• Published: Institutional Knowledge at Singapore Management University 2007
• Subjects: Physical Sciences and Mathematics
• Online Access: https://ink.library.smu.edu.sg/lkcsb_research/3359; https://ieeexplore.ieee.org/document/5758449
• Institution: Singapore Management University

We summarize results on the processing and characterization of current injected 1.55 micrometer single- and multi-microring lasers including vertical active/passive waveguide coupling. The devices were fabricated by GaInAsP/InP-GaAs full-wafer bonding using a BCB interface.