Low temperature, high conductivity Al-doped ZnO film fabrication using modified facing target sputtering

• المؤلفون الرئيسيون: Kim J., Jin S., Wen L., Premphet P., Leksakul K., Han J.
• التنسيق: مقال
• منشور في: Elsevier 2015
• الموضوعات: Surfaces, Coatings and Films; Surfaces and Interfaces; Metals and Alloys; Materials Chemistry; Electronic, Optical and Magnetic Materials
• الوصول للمادة أونلاين: http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84929291825&origin=inward; http://cmuir.cmu.ac.th/handle/6653943832/39127
• المؤسسة: Chiang Mai University

© 2015 Elsevier B.V. Al-doped ZnO films were deposited and characterized for a transparent electrode. To synthesize low temperature and low resistivity films using stronger plasma confinement, modified facing target sputtering was used. The modified process was designed using 2-D magnetic field simu...