N-Type Superconductivity in an Organic Mott Insulator Induced by Light-Driven Electron-Doping
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim The presence of interface dipoles in self-assembled monolayers (SAMs) gives rise to electric-field effects at the device interfaces. SAMs of spiropyran derivatives can be used as photoactive interface dipole layer in field-effect transistors be...
Saved in:
Main Authors: | Suda M., Takashina N., Namuangruk S., Kungwan N., Sakurai H., Yamamoto H. |
---|---|
Format: | Journal |
Published: |
2017
|
Online Access: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85021434465&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/40114 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Chiang Mai University |
Similar Items
-
N-Type Superconductivity in an Organic Mott Insulator Induced by Light-Driven Electron-Doping
by: Masayuki Suda, et al.
Published: (2018) -
N-Type Superconductivity in an Organic Mott Insulator Induced by Light-Driven Electron-Doping
by: Masayuki Suda, et al.
Published: (2018) -
Mott variable range hopping and bad-metal in lightly doped spin-orbit Mott insulator BaIrO3
by: Ma, H. J. Harsan, et al.
Published: (2020) -
Quantum Correlated Plasmons and Their Tunability in Undoped and Doped Mott-Insulator Cuprates
by: Xinmao Yin, et al.
Published: (2021) -
Optical properties of a vibrationally modulated solid state Mott insulator
by: Kaiser, S., et al.
Published: (2014)