Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer
© 2016 Elsevier B.V. In this work, we have investigated the thin film based field-effect transistor (FET) with interlinked ZnO tetrapod network (ITN-ZnO) used as an active channel layer. The ITN-ZnOs were synthesized by microwave assisted thermal oxidation technique. A ZnO FET with bottom gate struc...
محفوظ في:
| المؤلفون الرئيسيون: | , , , , |
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| التنسيق: | دورية |
| منشور في: |
2017
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| الوصول للمادة أونلاين: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84963976875&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/41309 |
| الوسوم: |
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| الملخص: | © 2016 Elsevier B.V. In this work, we have investigated the thin film based field-effect transistor (FET) with interlinked ZnO tetrapod network (ITN-ZnO) used as an active channel layer. The ITN-ZnOs were synthesized by microwave assisted thermal oxidation technique. A ZnO FET with bottom gate structure was fabricated and investigated in terms of electrical properties. X-ray diffraction pattern revealed the wurtzite hexagonal structure of the ITN-ZnO. A drain current on/off ratio of 10 4 , the off-state current as low as 10 nA, the threshold voltage of 10 V, field effect mobility of 7.939 cm 2 /Vs and sub-threshold swing of 1.4 V/decade were obtained. These results suggested that ITN-ZnO could be applied for FET, which could be operated in an enhancement mode. |
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