Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer

Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer

© 2016 Elsevier B.V. In this work, we have investigated the thin film based field-effect transistor (FET) with interlinked ZnO tetrapod network (ITN-ZnO) used as an active channel layer. The ITN-ZnOs were synthesized by microwave assisted thermal oxidation technique. A ZnO FET with bottom gate struc...

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Main Authors: Ponhan W., Thepnurat M., Phadungdhitidhada S., Wongratanaphisan D., Choopun S.
Format: Journal
Published: 2017
Online Access:https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84963976875&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/41309
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spelling th-cmuir.6653943832-413092017-09-28T04:20:33Z Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer Ponhan W. Thepnurat M. Phadungdhitidhada S. Wongratanaphisan D. Choopun S. © 2016 Elsevier B.V. In this work, we have investigated the thin film based field-effect transistor (FET) with interlinked ZnO tetrapod network (ITN-ZnO) used as an active channel layer. The ITN-ZnOs were synthesized by microwave assisted thermal oxidation technique. A ZnO FET with bottom gate structure was fabricated and investigated in terms of electrical properties. X-ray diffraction pattern revealed the wurtzite hexagonal structure of the ITN-ZnO. A drain current on/off ratio of 10 4 , the off-state current as low as 10 nA, the threshold voltage of 10 V, field effect mobility of 7.939 cm 2 /Vs and sub-threshold swing of 1.4 V/decade were obtained. These results suggested that ITN-ZnO could be applied for FET, which could be operated in an enhancement mode. 2017-09-28T04:20:33Z 2017-09-28T04:20:33Z 2016-11-25 Journal 02578972 2-s2.0-84963976875 10.1016/j.surfcoat.2016.04.022 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84963976875&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/41309
institution Chiang Mai University
building Chiang Mai University Library
country Thailand
collection CMU Intellectual Repository
description © 2016 Elsevier B.V. In this work, we have investigated the thin film based field-effect transistor (FET) with interlinked ZnO tetrapod network (ITN-ZnO) used as an active channel layer. The ITN-ZnOs were synthesized by microwave assisted thermal oxidation technique. A ZnO FET with bottom gate structure was fabricated and investigated in terms of electrical properties. X-ray diffraction pattern revealed the wurtzite hexagonal structure of the ITN-ZnO. A drain current on/off ratio of 10 4 , the off-state current as low as 10 nA, the threshold voltage of 10 V, field effect mobility of 7.939 cm 2 /Vs and sub-threshold swing of 1.4 V/decade were obtained. These results suggested that ITN-ZnO could be applied for FET, which could be operated in an enhancement mode.
format Journal
author Ponhan W.
Thepnurat M.
Phadungdhitidhada S.
Wongratanaphisan D.
Choopun S.
spellingShingle Ponhan W.
Thepnurat M.
Phadungdhitidhada S.
Wongratanaphisan D.
Choopun S.
Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer
author_facet Ponhan W.
Thepnurat M.
Phadungdhitidhada S.
Wongratanaphisan D.
Choopun S.
author_sort Ponhan W.
title Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer
title_short Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer
title_full Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer
title_fullStr Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer
title_full_unstemmed Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer
title_sort electrical properties of field-effect transistor with interlinked zno tetrapod network as an active layer
publishDate 2017
url https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84963976875&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/41309
_version_ 1681421978319192064

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